TCAD simulation of interface traps related variability in bulk decananometer mosfets

@article{Velayudhan2014TCADSO,
  title={TCAD simulation of interface traps related variability in bulk decananometer mosfets},
  author={V. Velayudhan and Javier Mart{\'i}n-Mart{\'i}nez and Rosana Rodr{\'i}guez and Marc Porti and Montserrat Nafr{\'i}a and Xavier Aymerich and C. Medina and Francisco Gamiz},
  journal={2014 5th European Workshop on CMOS Variability (VARI)},
  year={2014},
  pages={1-6}
}
Interface traps can introduce random variations in the drain current of MOSFETs, becoming a source of device variability. In this work, 2D and 3D TCAD simulations of devices with channel length in the decananometer range are carried out to analyze the impact of their spatial distribution on the drift of the threshold voltage. 2D simulations show that traps… CONTINUE READING