TCAD modeling of charge transport in HV-IC encapsulation materials

@article{Imperiale2014TCADMO,
  title={TCAD modeling of charge transport in HV-IC encapsulation materials},
  author={I. Imperiale and S.. Reggiani and E.. Gnani and A. Gnudi and G.. Baccarani and Luu Nguyen and Marie Denison},
  journal={2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)},
  year={2014},
  pages={450-453}
}
In high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is proposed which is suitable for investigating the role played by the propagation of charge within the plastic mold over the surface of high-voltage circuits. Simulations are compared with experimental data carried out using a dedicated test chip. The… CONTINUE READING
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