TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections

@article{Carapezzi2016TCADLM,
  title={TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections},
  author={Stefania Carapezzi and Enrico Caruso and Antonio Gnudi and Susanna Reggiani and Elena Gnani},
  journal={2016 46th European Solid-State Device Research Conference (ESSDERC)},
  year={2016},
  pages={416-419}
}
A new approach for including quasi-ballistic effects into TCAD drift diffusion simulations of short-channel III-V MOSFETs at low longitudinal fields is presented. The model is based on the concept of ballistic mobility through a modified Matthiessen rule. It has been applied to double-gate thin-body InGaAs MOSFETs and benchmarked against multi-subband Monte Carlo simulations. Our results indicate that the model provides I-V characteristics in good agreement with Monte Carlo for channel lengths… CONTINUE READING

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