Systematic comparison between a new lattice kinetic Monte Carlo method and conventional polyhedron method for stress simulation in FinFETs

@article{Guo2014SystematicCB,
  title={Systematic comparison between a new lattice kinetic Monte Carlo method and conventional polyhedron method for stress simulation in FinFETs},
  author={Yiluan Guo and Jun Luo and Guilei Wang and Xingxing Ke and Qingbo Liu and Chao Zhao},
  journal={2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)},
  year={2014},
  pages={1-3}
}
In this work, the Si1-xGex epitaxial growth in p-type bulk FinFETs is simulated by a new lattice kinetic Monte Carlo method (LKMC). Afterwards, the stress distribution in the channel is extracted and systematically compared to that extracted from the conventional polyhedron method. Except the difference in stress values, simulation results show that these… CONTINUE READING