Systematic Study of the Effects of Modulation p-Doping on 1.3-$\mu{\hbox {m}}$ Quantum-Dot Lasers

@article{Alexander2007SystematicSO,
  title={Systematic Study of the Effects of Modulation p-Doping on 1.3-\$\mu\{\hbox \{m\}\}\$ Quantum-Dot Lasers},
  author={Ross Alexander and D. T. D. Childs and Harish Agarwal and K. M. Groom and Hui-Yun Liu and M. Hopkinson and R. A. Hogg and Masanori Ishida and Tsuyoshi Yamamoto and Mitsuru Sugawara and Y. Arakawa and T. J. Badcock and R. J. Royce and D J Mowbray},
  journal={IEEE Journal of Quantum Electronics},
  year={2007},
  volume={43},
  pages={1129-1139}
}
The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures are employed. We report: 1) how the level of modulation p-doping alters the length dependant laser characteristics (in turn providing insight on various key parameters); 2) the effect of modulation p… CONTINUE READING

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