Synthesis of high-quality ultra-thin gate oxides for ULSI applications


A critical challenge in achieving ultra-large-scale-integration (ULSI) is growing ultra-thin oxides with low defect (D0) and interface trap (Qit) densities and generating a planar stress-free silicon/oxide (Si-SiO2) interface. This paper describes the fabrication of a thin, multilayered, stacked SiO2 structure with such characteristics. The dramatic… (More)


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