Synthesis of AlN Thin Films on Sapphire Substrates by Chemical Vapor Deposition of AlCl3–NH3 System and Surface Acoustic Wave Properties

@inproceedings{Kaya1996SynthesisOA,
  title={Synthesis of AlN Thin Films on Sapphire Substrates by Chemical Vapor Deposition of AlCl3–NH3 System and Surface Acoustic Wave Properties},
  author={Kiyoshi Kaya and Yasuhito Kanno and Hiroshi Takahashi and Yoshihiko Shibata and Toshio Hirai},
  year={1996}
}
Thin films of AlN were prepared on (012) sapphire substrates by chemical vapor deposition using AlCl3, NH3, H2 and N2 gases. Crystal orientations, surface microstructures, oxygen impurity contents of the films and surface acoustic wave (SAW) properties determined using an interdigital transducer were investigated. Under optimized conditions, epitaxial AlN films were deposited and crystal orientation of AlN films increased as the thickness of the films increased. Oxygen impurity contents were… CONTINUE READING

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