Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices.

@article{Kim2012SynthesisAC,
  title={Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices.},
  author={Ki Kang Kim and Allen L Hsu and Xiaoting Jia and Soo Min Kim and Yumeng Shi and Mildred S. Dresselhaus and Tom{\'a}s Palacios and Jing Kong},
  journal={ACS nano},
  year={2012},
  volume={6 10},
  pages={
          8583-90
        }
}
Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected by the concentration of borazine as a precursor and the ambient gas condition such as the ratio of… CONTINUE READING
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Monolayer of h-BN Chemisorbed on Cu(111) andNi(111): The Role A RTIC

A. B. Preobrajenski, A. S. Vinogradov, N. Martensson
  • LE KIM ET AL. VOL
  • 2012

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