Synthesis and Control of Ultra Thin Gate Oxides for the 90 and 65 NM Nodes

Abstract

Thin gate oxide processes for advanced semiconductor manufacturing present many challenges at both the 90 and 65 nm technology nodes. In most cases the films are oxynitride materials (SiO<sub>x</sub>N<sub>y </sub>) constructed in single wafer tools clustered on the same common platform. The combination of discrete process chambers and the atomic dimensions… (More)

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Cite this paper

@article{Shepard2005SynthesisAC, title={Synthesis and Control of Ultra Thin Gate Oxides for the 90 and 65 NM Nodes}, author={J. F. Shepard and Aaron S. Chou and M. P. Chudzik and Clair Collins and M. B. Freiler and Wei He and Paul Kirsch and Andy Loebl and R. T. Mo and P. Ronsheim and Erica Rottenkolber and Wenjuan Zhu}, journal={2005 13th International Conference on Advanced Thermal Processing of Semiconductors}, year={2005}, pages={31-35} }