Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.

@article{Yu2013SynergisticAT,
  title={Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.},
  author={Xinge Yu and Nanjia Zhou and Jeremy Elliot Smith and Hui Lin and Katie Stallings and Junsheng Yu and Tobin J Marks and Antonio Facchetti},
  journal={ACS applied materials & interfaces},
  year={2013},
  volume={5 16},
  pages={7983-8}
}
We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 °C are ~5tmex larger (~2.6 cm(2)/(V s)) than those of single-layer IGO TFTs (~0.5 cm(2)/(V s)), reaching values… CONTINUE READING

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Thin-Film Transistors With Amorphous Indium–Gallium-Oxide Bilayer Channel

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