SymFET: A proposed symmetric graphene tunneling field effect transistor

@article{Zhao2012SymFETAP,
  title={SymFET: A proposed symmetric graphene tunneling field effect transistor},
  author={Pei Lin Zhao and Randall M. Feenstra and Gong Gu and Debjeep Jena},
  journal={IEEE Transactions on Electron Devices},
  year={2012},
  volume={60},
  pages={951-957}
}
The expressions given in previous section, is for T = 0K. The room temperature results need to consider the Fermi distribution with integral over energy. The corresponding device parameters are labeled in the figures. A graphene length L = 100 nm is assumed. When the tunnel barrier is thicker, the resonant peak current decreases as expected (Figure 2 (a)). Thinner tgate offers better gate control and higher gate induced doping (and more resonant current). The corresponding resonance peaks… CONTINUE READING

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