Switching of the Mott transition based on hole-driven MIT theory

@article{Kim2008SwitchingOT,
  title={Switching of the Mott transition based on hole-driven MIT theory},
  author={Hyun-tak Kim and Bong Jun Kim and Yong Wook Lee and Byung Gyu Chae and Sun Jin Yun},
  journal={Physica B-condensed Matter},
  year={2008},
  volume={403},
  pages={1434-1436}
}
Abstract Switching voltage of first-order metal–insulator transition (MIT) in VO 2 , an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with λ =1.5 μm and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole doping of a low concentration below 0.01% into conduction band (Fermi surface) induces the abrupt MIT as correlation effect. The switching is explained by the Mott transition not the… 
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