Switching of the Mott transition based on hole-driven MIT theory

  title={Switching of the Mott transition based on hole-driven MIT theory},
  author={Hyun-Tak Kim and Bong Jun Kim and Yong Wook Lee and Byung Gyu Chae and Sun Jin Yun},
  journal={Physica B-condensed Matter},
Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor
For two-terminal devices fabricated by Be (or Mn)-doped p-type epitaxial GaAs thin films, when the Mott metal-insulator transition (MIT) as current jump occurs, we observe that the energy gap of GaAs
Effect of free-carrier concentration on the phase transition and vibrational properties of VO$_{2}$
The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found
Intermediate metallic phase in VO₂ observed with scanning tunneling spectroscopy.
The results show that the formation of an IMP plays an important role in the MIT of intrinsic VO2 and the local density of states of individual nanowires throughout the MIT regime is presented.
Hall voltage reversal and structural phase transition in VO2thin films
In this work, we investigated the nanoscale conduction and charge transport characteristics of epitaxial VO2 thin films around the metal-insulator transition (MIT) using the Hall transport
Chapter 2 Metal-Insulator Transition in Thin Film Vanadium Dioxide
Recent advances in thin film growth of transition metal oxides coupled with the discovery of fascinating phenomena such as superconductivity and colos- sal magneto-resistance has caused an enormous
Electrical oscillations induced by the metal-insulator transition in VO2
We systematically investigate the characteristics of an electrical oscillation observed in two-terminal vanadium dioxide (VO2) devices. These oscillations are observed at room temperature in a simple
Self‐heating and External Strain Coupling Induced Phase Transition of VO2 Nanobeam as Single Domain Switch
Compared to the multiple-domain transition, the phase switch of a nanobeam based on a single domain has more potential applications in functional devices such as phase-change memories, and it is diffi cult to realize independent control of temperature and strain, which may limit the application of VO 2 in novel devices.
Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions
200 nm diameter Au contacts were fabricated by e-beam lithography on sputtered thin film vanadium oxide grown on conducting substrates and current perpendicular to plane electron transport
Analysis of diverging effective mass extracted from thermoelectric power across the metal–insulator transition in VO2
In order to reveal the electron-electron correlation (interaction) effect in a Mott insulator VO2, we measured the temperature dependence of the thermopower, Hall effect, and Raman spectra in VO2


Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices
When holes of about 0.018% are induced into a conduction band (breakdown of critical on-site Coulomb energy), an abrupt first-order Mott metal–insulator transition (MIT) rather than a continuous
Monoclinic and correlated metal phase in VO(2) as evidence of the Mott transition: coherent phonon analysis.
In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 and 6.0 THz indicating the rutile metal phase of VO2 does not occur simultaneously with the first-order
VO2: Peierls or Mott-Hubbard? A view from band theory.
Findings suggest that the electronic and structural properties ofVO may be more bandlike than correlated, and rigid criteria for distinguishing correlated from band insulators are not available.