Switching of the Mott transition based on hole-driven MIT theory

@article{Kim2008SwitchingOT,
  title={Switching of the Mott transition based on hole-driven MIT theory},
  author={Hyun-tak Kim and Bong Jun Kim and Yong Wook Lee and Byung Gyu Chae and Sun Jin Yun},
  journal={Physica B-condensed Matter},
  year={2008},
  volume={403},
  pages={1434-1436}
}
Abstract Switching voltage of first-order metal–insulator transition (MIT) in VO 2 , an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with λ =1.5 μm and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole doping of a low concentration below 0.01% into conduction band (Fermi surface) induces the abrupt MIT as correlation effect. The switching is explained by the Mott transition not the… 
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For two-terminal devices fabricated by Be (or Mn)-doped p-type epitaxial GaAs thin films, when the Mott metal-insulator transition (MIT) as current jump occurs, we observe that the energy gap of GaAs…
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The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found…
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TLDR
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In this work, we investigated the nanoscale conduction and charge transport characteristics of epitaxial VO2 thin films around the metal-insulator transition (MIT) using the Hall transport…
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TLDR
Compared to the multiple-domain transition, the phase switch of a nanobeam based on a single domain has more potential applications in functional devices such as phase-change memories, and it is diffi cult to realize independent control of temperature and strain, which may limit the application of VO 2 in novel devices.
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200 nm diameter Au contacts were fabricated by e-beam lithography on sputtered thin film vanadium oxide grown on conducting substrates and current perpendicular to plane electron transport…
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In order to reveal the electron-electron correlation (interaction) effect in a Mott insulator VO2, we measured the temperature dependence of the thermopower, Hall effect, and Raman spectra in VO2…
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Comment on "VO2: Peierls or Mott-Hubbard? A view from band theory"
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