Switching mechanism in two-terminal vanadium dioxide devices.


Two-terminal thin film VO2 devices show an abrupt decrease of resistance when the current or voltage applied exceeds a threshold value. This phenomenon is often described as a field-induced metal-insulator transition. We fabricate nano-scale devices with different electrode separations down to 100 nm and study how the dc switching voltage and current depend… (More)
DOI: 10.1088/0957-4484/26/16/165202