Switching Simulation of Si-GTO, SiC-GTO and Power MOSFET

@article{Sujod2006SwitchingSO,
  title={Switching Simulation of Si-GTO, SiC-GTO and Power MOSFET},
  author={M. Z. Sujod and Hirotaugu Sakata},
  journal={2006 IEEE International Power and Energy Conference},
  year={2006},
  pages={488-491}
}
Recent development in power electronics has made power semiconductor devices larger and more complicated, and device simulation is necessary to predict their characteristics. From the fundamental equations of semiconductor devices, potential distribution and carrier concentrations can be solved using the finite element method (FEM), silicon carbide (SiC) material has been utilized for power devices, in order to achieve fast switching time and low switching loss. In this study, we use our FEM… CONTINUE READING