Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

@inproceedings{Gao2012SurfaceplasmonenhancedDL,
  title={Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells},
  author={Na Gao and Kai Huang and Jingguo Li and Shuping Li and Xu Yang and Junyong Kang},
  booktitle={Scientific reports},
  year={2012}
}
We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emission enhancement of deep-UV LEDs is attributed to the higher LEE by the surface plasmon-transverse… CONTINUE READING
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The authors declare no competing financial interests

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