Surface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition

@inproceedings{Kimukin2006SurfaceDT,
  title={Surface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition},
  author={Ibrahim Kimukin and M. Saif Islam and R. Stanley Williams},
  year={2006}
}
An accurate evaluation of the radial dopant profile in a nanowire is crucial for designing future nanoscale devices synthesized using bottom-up techniques. We developed a very slow wet chemical etchant for gradually reducing the diameters of metal-catalysed, boron-doped silicon nanowires with varying diameters and lengths. Particular care has been taken to perform the experiment at room temperature to prevent dopant segregation, which is common in high temperature processes. By ensuring… CONTINUE READING

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Nanotechnology 15 L5 S244 Surface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition

  • M SIslam, S Sharma, T IKamins, R SWilliams
  • 2004
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