Surface acoustic wave-driven planar light-emitting device

@article{Cecchini2004SurfaceAW,
  title={Surface acoustic wave-driven planar light-emitting device},
  author={Marco Cecchini and Giorgio De Simoni and Vincenzo Piazza and Fabio Beltram and Harvey E. Beere and D. A. Ritchie NEST-INFM and Scuola Normale Superiore and Pisa and Italy. and Cavendish Laboratory and University of Cambridge and Cambridge and United Kingdom.},
  journal={Applied Physics Letters},
  year={2004},
  volume={85},
  pages={3020-3022}
}
Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed [Cecchini et al., Appl. Phys. Lett. 82, 636 (2003)]. Current-voltage, light-voltage, and photoluminescence characteristics are presented at cryogenic temperatures. We argue that this scheme represents a valuable building… 
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Surface acoustic wave-induced electroluminescence intensity oscillation in planar light-emitting devices
Electroluminescence emission from surface acoustic wave-driven light-emitting diodes (SAWLEDs) is studied by means of time-resolved techniques. We show that the intensity of the SAW-induced…
Acoustoelectric luminescence from a field-effect n-i-p lateral junction
A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is…
Surface-acoustic-wave-driven luminescence from a lateral p-n junction
The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs∕AlGaAs quantum well on a patterned GaAs…
Electroluminescence from a suspended tip-synthesized nano ZnO dot
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Temporal isolation of surface-acoustic-wave-driven luminescence from a lateral p–n junction using pulsed techniques
Lateral light emitting n-i-p diodes in InSb∕AlxIn1−xSb quantum wells
Lateral light emitting diodes have been fabricated in InSb∕AlxIn1−xSb quantum wells using a simple bevel etching technique. The peak in emission was found to be in the range of 4–5μm, confirming that…
Anti-bunched photons from a lateral light-emitting diode
We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g(2)(0) = 0.7, is achieved at cryogenic temperature in the pulsed low-current…
Acoustic charge transport in a n-i-n three terminal device
We present an unconventional scheme for acoustic charge transport devices based on a n-i-n lateral junction as electron injector. We show that surface acoustic waves (SAWs) are able to pick up…
Modulation of single quantum dot energy levels by a surface-acoustic-wave
This letter presents an experimental investigation into the effect of a surface-acoustic-wave (SAW) on the emission of a single InAs quantum dot. The SAW causes the energy of the transitions within…
Examination of surface acoustic wave reflections by observing acoustoelectric current generation under pulse modulation
The authors investigate surface acoustic wave (SAW) reflections using the frequency dependence of the acoustoelectric current through a one-dimensional channel. By pulse modulating the transducer…
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