Surface Passivation of III–V GaAs Nanopillars by Low-Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

@article{Jacob2022SurfacePO,
  title={Surface Passivation of III–V GaAs Nanopillars by Low-Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices},
  author={Bejoys Jacob and Filipe Camarneiro and J{\'e}r{\^o}me Borme and Oleksandr Bondarchuk and Jana B. Nieder and Bruno Romeira},
  journal={ACS Applied Electronic Materials},
  year={2022}
}
: Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their non-radiative states, aiming at highly-efficient III-V sub-micrometer active devices and circuits. Despite many advances, the poor reproducibility and short-term passivation effect of chemical treatments such as sulfidation and nitridation requires the use of protective encapsulation methods, not only to protect the surface, but to provide electrical isolation… 

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