Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells: a practical route to hot carrier solar cells

  title={Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs\$\_\{x\}\$Sb\$\_\{1-x\}\$ quantum wells: a practical route to hot carrier solar cells},
  author={Hamidreza Esmaielpour and Vincent R. Whiteside and J. Tang and S. Vijeyaragunathan and Tetsuya D. Mishima and Shayne Cairns and M. B. Santos and B. Wang and I. R. Sellers Homer L. Dodge and Department of PhysicsAstronomy and University of Oklahoma and Norman and Ok and Usa and School of Chemical and Biological and Materials Engineering and Sarkey's Energy Center},
  journal={Progress in Photovoltaics},
InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation below 90 K to a regime where inhibited radiative recombination dominates the hot carrier relaxation at elevated temperatures. At temperatures below 90 K photoluminescence measurements are consistent with… 

Figures from this paper

Evidence of suppressed hot carrier relaxation in type-II InAs/AlAs1-xSbx quantum wells
Hot carrier solar cells (HCSCs) have been proposed as devices, which can increase the conversion efficiency of a single junction solar cell above the Shockley-Queisser limit. For practical
Control of hot carrier thermalization in type-II quantum wells: a route to practical hot carrier solar cells
  • H. Esmaielpour, V. R. Whiteside, +8 authors I. Sellers
  • Materials Science
    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
  • 2018
Hot carrier distributions generated by the absorption of high-energy photons typically etherealize rapidly via various phonon-mediated relaxation processes. In this paper, it is shown that type-II
Hot carrier relaxation and inhibited thermalization in superlattice heterostructures: The potential for phonon management
One of the main loss mechanisms in photovoltaic solar cells is the thermalization of photogenerated hot carriers via phonon-mediated relaxation. By inhibiting these relaxation mechanisms and reducing
Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling
It is proposed that the subsequent reabsorption of acoustic and optical phonons is facilitated by a mismatch in phonon dispersions at the InAs-AlAsSb interface and serves to further stabilize hot electrons in this system.
Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum well absorbers
An InGaAsP quantum well with a type-II band alignment is studied using continuous wave power and temperature dependent photoluminescence (PL) spectroscopy. The small energy separation between the
Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature
In common photovoltaic devices, the part of the incident energy above the absorption threshold quickly ends up as heat, which limits their maximum achievable efficiency to far below the thermodynamic
Non-equilibrium dynamics, materials and structures for hot carrier solar cells: a detailed review
Since their advent around the start of the millennium, hot carrier solar cells came into the focus of a broader research community as one of the so-called 3$^{\rm{rd}}$ generation photovoltaic
Electrical characteristics and hot carrier effects in quantum well solar cells
We report on the opto-electrical characterization of quantum-well solar cells designed for generation of hot carriers. Short-circuit current is proportional to laser power in the entire range.
A metallic hot-carrier photovoltaic device
Hot carrier solar cells overcome the fundamental limitations of conventional devices where charge carriers are photogenerated over a broad energy spectrum but rapidly lose energy to the lattice and
Effects of longitudinal optical phonon lifetimes on hot-carrier solar cells: a theoretical study
  • Chin-Yi Tsai
  • Materials Science
    Materials Research Express
  • 2018
Theoretical models and explicit formulas with the decay processes of optical phonons are presented for calculating intraband carrier energy relaxation rates. They are incorporated into the Ross-Nozik


Hot-carrier energy-loss rates in GaAs/AlxGa
  • Leo, Ruehle, Ploog
  • Materials Science, Medicine
    Physical review. B, Condensed matter
  • 1988
The energy-loss rate due to deformation-potential scattering with acoustical phonons increases with decreasing well width, and the reduction of the energy- Loss rate by optical-phonon scattering cannot be explained by screening or degeneracy but rather is consistent with a hot- phonon effect.
Hot Carriers in Quantum Wells for Photovoltaic Efficiency Enhancement
In a hot carrier solar cell, the steady-state carrier population is hot relative to the surrounding lattice. This requires an absorber material which restricts carrier-phonon interaction and,
Enhanced Hot-Carrier Effects in InAlAs/InGaAs Quantum Wells
Hot-carrier solar cells require absorber materials with restricted carrier thermalization pathways, in order to slow the rate of heat energy dissipation from the carrier population to the lattice,
Hot-carrier cooling in GaAs: Quantum wells versus bulk.
Both sets of experiments and analyses show that the hot-electron cooling rate can be much slower in GaAs quantum wells compared (at the same photogenerated carrier density) to bulk GaAs when this density is above a critical value.
Hot-carrier energy-loss rates in GaAs/Al/sub x/Ga/sub 1-//sub x/As quantum wells
We present a systematic study of the cooling of hot carriers in undoped, n-type doped, and p-type doped GaAs/Al/sub x/Ga/sub 1-//sub x/As quantum wells of different well widths by time-resolved
Evidence of hot carriers at elevated temperatures in InAs/AlAs0.84Sb0.16 quantum wells
InAs/AlAs0.84Sb0.14 quantum wells (QWs) are investigated as a potential system for applications in hot carrier solar cells. Temperature and power dependent photoluminescence (PL) measurements show
ab initio study of hot carriers in the first picosecond after sunlight absorption in silicon.
An ab initio approach based on density functional theory and many-body perturbation theory is developed and applied to investigate hot carriers in semiconductors, and sheds light on the subpicosecond time scale after sunlight absorption in Si.
Hot carrier solar cell absorber prerequisites and candidate material systems
Abstract The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalise to the band edges. Hence it can potentially achieve a high current and a high
Demonstration of a hot-carrier photovoltaic cell
We demonstrate a new hot-carrier photovoltaic cell based on the resonant tunnelling of hot electrons from a narrow-band-gap semiconductor to a wider-band-gap semiconductor. Hot electrons are
Charge separation and temperature-induced carrier migration in Ga 1 − x In x N y As 1 − y multiple quantum
We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga1−xInxNyAs1−y multiple quantum well structures in magnetic fields up to 50 T as a function of temperature