# Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells: a practical route to hot carrier solar cells

@article{Esmaielpour2015SuppressionOP,
title={Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAs\$\_\{x\}\$Sb\$\_\{1-x\}\$ quantum wells: a practical route to hot carrier solar cells},
author={Hamidreza Esmaielpour and Vincent R. Whiteside and J. Tang and S. Vijeyaragunathan and Tetsuya D. Mishima and Shayne Cairns and M. B. Santos and B. Wang and I. R. Sellers Homer L. Dodge and Department of PhysicsAstronomy and University of Oklahoma and Norman and Ok and Usa and School of Chemical and Biological and Materials Engineering and Sarkey's Energy Center},
journal={Progress in Photovoltaics},
year={2015},
volume={24},
pages={591-599}
}
InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation below 90 K to a regime where inhibited radiative recombination dominates the hot carrier relaxation at elevated temperatures. At temperatures below 90 K photoluminescence measurements are consistent with… Expand
34 Citations

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