Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultra-Thin Body nMOSFETs with SOI Thickness of Less Than 2 nm

@article{Shimizu2007SuppressionOE,
  title={Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultra-Thin Body nMOSFETs with SOI Thickness of Less Than 2 nm},
  author={Kyoko Shimizu and Toshiro Hiramoto},
  journal={2007 IEEE International SOI Conference},
  year={2007},
  pages={145-146}
}
Much attention has been paid to ultra-thin body (UTB) and double-gate (DG) MOSFETs because of their superior immunity to short channel effect. However, it has been reported that the electron mobility is degraded in DG compared with single-gate (SG) in (100) UTB nMOSFETs with SOI thickness (tSOI) of around 5-15 nm (Uchida et al., 2003). On the other hand, it… CONTINUE READING