Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx films

  title={Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx films},
  author={Chang-kyu Lee and Hong Yoon Jung and Se Yeob Park and Byeong Geun Son and Chul-kyu Lee and Hyo Jin Kim and Rino Choi and Dae-hwan Kim and Jong-Uk Bae and Woo-Sup Shin and Jae Kyeong Jeong},
  journal={IEEE Electron Device Letters},
This letter examined the insertion effect of thermal TiO<sub>2</sub> films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiO<i>x</i> device inserted at the ZTO/silicon nitride (SiN<i>x</i>) interface exhibited slightly lower mobility (9.4 cm<sup>2</sup>/V·s ) compared with that (14.1 cm<sup>2</sup>/V·s ) of the reference device with a ZTO/SiN<i>x</i> stack. On the other hand, the negative gate-bias-illumination-stress… CONTINUE READING
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