Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiO<sub>x</sub> films

Abstract

This letter examined the insertion effect of thermal TiO<sub>2</sub> films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiO<i>x</i> device inserted at the ZTO/silicon nitride (SiN<i>x</i>) interface exhibited slightly lower mobility (9.4 cm<sup>2</sup>/V&#x00B7;s ) compared with… (More)

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@article{Lee2013SuppressionIN, title={Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx films}, author={Chang-Kyu Lee and Hong Yoon Jung and Se Yeob Park and Byeong Geun Son and Chul-kyu Lee and Hyo Jin Kim and Rino Choi and Dae Hwan Kim and Jong-Uk Bae and Woo-Sup Shin and Jae Kyeong Jeong}, journal={IEEE Electron Device Letters}, year={2013}, volume={34}, pages={253-255} }