Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2Te3 Topological Insulator Thin Films

@inproceedings{Kampmeier2015SuppressingTD,
  title={Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2Te3 Topological Insulator Thin Films},
  author={J{\"o}rn Kampmeier and Svetlana Borisova and Lukasz Plucinski and Martina Luysberg and Gregor Mussler and Detlev Gr{\"u}tzmacher},
  year={2015}
}
The structural perfection of the topological insulator (TI) Bi2Te3 is a key issue for its employment in future device applications. State of the art TIs, featuring exotic electronic properties, predominantly suffer from structural defects such as twin domains. A suppression of such domains in molecular beam epitaxy-grown Bi2Te3 thin films on Si(111) substrates—measured by X-ray diffraction pole figure scans—is presented in this paper. A numerical analysis of van der Waals potentials was… CONTINUE READING