Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications

With a significantly reduced Negative Bias Temperature Instability, SiGe channel pMOSFETs promise to virtually eliminate this reliability issue for ultra-thin EOT devices. The intrinsically superior NBTI robustness is understood in terms of a favorable energy decoupling between the SiGe channel and the gate dielectric defects. Thanks to this effect, a… CONTINUE READING