Superior NBTI in High- $k$ SiGe Transistors–Part I: Experimental

@article{Waltl2017SuperiorNI,
  title={Superior NBTI in High- \$k\$ SiGe Transistors–Part I: Experimental},
  author={Michael Waltl and Gerhard Rzepa and Alexander Grill and Wolfgang G{\"o}s and Jacopo Franco and Ben Kaczer and Liesbeth Witters and J{\'e}r{\^o}me Mitard and Naoto Horiguchi and Tibor Grasser},
  journal={IEEE Transactions on Electron Devices},
  year={2017},
  volume={64},
  pages={2092-2098}
}
SiGe quantum-well pMOSFETs have recently been introduced for enhanced performance of transistors. Quite surprisingly, a significant reduction in negative bias temperature instability (NBTI) was also found in these devices. Furthermore, a stronger oxide field acceleration of the degradation in SiGe devices compared with Si devices was reported. These observations were speculated to be a consequence of the energetical realignment of the SiGe channel with respect to the dielectric stack. As these… CONTINUE READING