Superhard semiconducting optically transparent high pressure phase of boron.

@article{Zarechnaya2009SuperhardSO,
  title={Superhard semiconducting optically transparent high pressure phase of boron.},
  author={E. Zarechnaya and L. Dubrovinsky and N. Dubrovinskaia and Y. Filinchuk and D. Chernyshov and V. Dmitriev and N. Miyajima and A. El Goresy and H. Braun and S. van Smaalen and I. Kantor and A. Kantor and V. Prakapenka and M. Hanfland and A. Mikhaylushkin and I. Abrikosov and S. Simak},
  journal={Physical review letters},
  year={2009},
  volume={102 18},
  pages={
          185501
        }
}
An orthorhombic (space group Pnnm) boron phase was synthesized at pressures above 9 GPa and high temperature, and it was demonstrated to be stable at least up to 30 GPa. The structure, determined by single-crystal x-ray diffraction, consists of B12 icosahedra and B2 dumbbells. The charge density distribution obtained from experimental data and ab initio calculations suggests covalent chemical bonding in this phase. Strong covalent interatomic interactions explain the low compressibility value… Expand
Band Gap of Semiconducting High Pressure Phase of Boron
High-pressure close-packed structure of boron
The high-pressure compressibility of B 12 P 2
Polarized Raman spectroscopy of high-pressure orthorhombic boron phase
Densification of amorphous boron under pressure
BORON UNDER PRESSURE: PHASE DIAGRAM AND NOVEL HIGH-PRESSURE PHASE
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