Super compact RFIC inductors in 0.18 /spl mu/m CMOS with copper interconnects

@article{Feng2002SuperCR,
  title={Super compact RFIC inductors in 0.18 /spl mu/m CMOS with copper interconnects},
  author={Haigang Feng and G. Jelodin and Ke-bo Gong and R. Zhan and Qu Wu and Chihyu Chen and A. Wang},
  journal={2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)},
  year={2002},
  volume={1},
  pages={553-556 vol.1}
}
Design of super compact on-chip inductors with deep-shrunk dimension of 22 /spl mu/m/spl times/23 /spl mu/m, as opposed to several hundreds /spl mu/m by several hundreds gm, is reported. Implemented in a 6-metal all-copper 0.18 /spl mu/m CMOS process, a flat inductor value of 10 nH up to 4 GHz, satisfactory to many typical RFIC applications, is achieved. The aggressive shrinkage reduces parasitic capacitance substantially and makes it realistic and cost-effective to realize single-chip RFICs in… CONTINUE READING
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