Sudden nucleation versus scale invariance of InAs quantum dots on GaAs

  title={Sudden nucleation versus scale invariance of InAs quantum dots on GaAs},
  author={Massimo Fanfoni and Ernesto Placidi and Fabrizio Arciprete and Emmanuela Orsini and F. Patella and A. Balzarotti},
  journal={Physical Review B},
InAs quantum dots (QDs) self-assembled on GaAs(001) at the early stage of growth show scale invariance of the island size distribution, which have been interpreted in the framework of the Mulheran and Blackman theory. The central concept is the capture zone of the growing nucleus properly identified by the Voronoi' cells. We show that the volume distribution of the quantum dots well overlaps the area distribution of the associated Voronoi' cells determined experimentally. Moreover, we evidence… 

Size Distribution and Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy

We studied the size distribution and scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs in the Stranski–Krastanow (SK) mode by molecular beam epitaxy (MBE) at 480 and

The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy

Self-assembled InAs quantum dots (QDs) grown on GaAs(001) by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-three-dimensional (quasi-3D; Q3D)

The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding

In the heteroepitaxy of InAs/GaAs(001), the growing InAs layer remains planar up to a characteristic coverage (critical thickness) above which three-dimensional (3D) islands form. Such growth mode

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as

Triggering InAs/GaAs Quantum Dot nucleation and growth rate determination by in-situ modulation of surface energy

Epitaxial InAs/GaAs Quantum Dots (QDs) are widely used as highly efficient and pure sources of single photons and entangled photon-pairs, however reliable wafer-scale growth techniques have proved

The influence of steps on the island distribution function in thin solid film formation

The gamma distribution has been shown to be the simplest function for describing the universal size distribution function of InAs quantum dots on GaAs(001) substrate (Fanfoni et al 2007 Phys. Rev. B

Comparative study of low temperature growth of InAs and InMnAs quantum dots

The two-dimensional to three-dimensional transition is not abrupt but rather slow, due to the finding that part of the deposited material also contributes to the wetting layer growth after quantum dot formation.

Correlations between optical properties and Voronoi-cell area of quantum dots

A semiconductor quantum dot (QD) can generate highly indistinguishable single photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD




We studied the cluster size distribution of dislocation-free InAs/GaAs self-assembled quantum dots obtained by the Stranski-Krastanow mode of molecular beam epitaxy. The same scaling function was

InAs/GaAs(001) epitaxy: kinetic effects in the two-dimensional to three-dimensional transition

Step instability and surface mass transport strongly influence the kinetics of the two- to three-dimensional (2D–3D) transition in InAs/GaAs self-assembly epitaxy. In this paper we report evidence of

Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

We discuss the self-aggregation process of InAs and Si–Ge quantum dots (QDs) on natural and patterned GaAs(001) and Si(001) and Si(111) surfaces, with reference to our recent studies with scanning

Step erosion during nucleation of InAs∕GaAs(001) quantum dots

We have investigated, by means of atomic force microscopy, the complete evolution of InAs∕GaAs(001) quantum dots as a function of deposited InAs. Direct evidence is found for step erosion by quantum

Dynamics of irreversible island growth during submonolayer epitaxy.

  • BalesChrzan
  • Physics
    Physical review. B, Condensed matter
  • 1994
The nucleation and growth of two-dimensional islands during the submonolayer stage of epitaxial growth is studied with kinetic Monte Carlo simulations and mean-field rate equations. Previous work on

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

The two- to three-dimensional growth mode transition in the InAs∕GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional

Film growth viewed as stochastic dot processes

In this article some results regarding film growth considered as a stochastic process of dots are reviewed. The central concept of the theory described in the initial part of the article is the

Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth

We have investigated by atomic force microscopy and scanning tunneling microscopy subsequent stages of the heteroepitaxy of InAs on GaAs(001) from the initial formation of the strained

The origins of island size scaling in heterogeneous film growth

A new description of the growth mechanism for the islands in submonolayer film coverage is presented which goes beyond the usual mean-field approximations. We show that the scaling behaviour observed