# Sudden nucleation versus scale invariance of InAs quantum dots on GaAs

@article{Fanfoni2007SuddenNV, title={Sudden nucleation versus scale invariance of InAs quantum dots on GaAs}, author={Massimo Fanfoni and Ernesto Placidi and Fabrizio Arciprete and Emmanuela Orsini and F. Patella and A. Balzarotti}, journal={Physical Review B}, year={2007}, volume={75}, pages={245312} }

InAs quantum dots (QDs) self-assembled on GaAs(001) at the early stage of growth show scale invariance of the island size distribution, which have been interpreted in the framework of the Mulheran and Blackman theory. The central concept is the capture zone of the growing nucleus properly identified by the Voronoi' cells. We show that the volume distribution of the quantum dots well overlaps the area distribution of the associated Voronoi' cells determined experimentally. Moreover, we evidence…

## 22 Citations

Size Distribution and Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy

- Materials Science
- 2012

We studied the size distribution and scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs in the Stranski–Krastanow (SK) mode by molecular beam epitaxy (MBE) at 480 and…

The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy

- Materials ScienceNanotechnology
- 2008

Self-assembled InAs quantum dots (QDs) grown on GaAs(001) by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-three-dimensional (quasi-3D; Q3D)…

The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding

- Materials Science
- 2008

In the heteroepitaxy of InAs/GaAs(001), the growing InAs layer remains planar up to a characteristic coverage (critical thickness) above which three-dimensional (3D) islands form. Such growth mode…

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

- Materials Science
- 2015

Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as…

Triggering InAs/GaAs Quantum Dot nucleation and growth rate determination by in-situ modulation of surface energy

- Physics, Materials Science
- 2019

Epitaxial InAs/GaAs Quantum Dots (QDs) are widely used as highly efficient and pure sources of single photons and entangled photon-pairs, however reliable wafer-scale growth techniques have proved…

The influence of steps on the island distribution function in thin solid film formation

- Physics
- 2007

The gamma distribution has been shown to be the simplest function for describing the universal size distribution function of InAs quantum dots on GaAs(001) substrate (Fanfoni et al 2007 Phys. Rev. B…

Comparative study of low temperature growth of InAs and InMnAs quantum dots

- Materials ScienceNanotechnology
- 2011

The two-dimensional to three-dimensional transition is not abrupt but rather slow, due to the finding that part of the deposited material also contributes to the wetting layer growth after quantum dot formation.

Correlations between optical properties and Voronoi-cell area of quantum dots

- PhysicsPhysical Review B
- 2019

A semiconductor quantum dot (QD) can generate highly indistinguishable single photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD…

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