Subthreshold slope of thin-film SOI MOSFET's

@article{Colinge1986SubthresholdSO,
  title={Subthreshold slope of thin-film SOI MOSFET's},
  author={J. Colinge},
  journal={IEEE Electron Device Letters},
  year={1986},
  volume={7},
  pages={244-246}
}
  • J. Colinge
  • Published 1986
  • Materials Science
  • IEEE Electron Device Letters
  • Silicon-on-insulator (SOI) n-channel transistors have been made in thin (90 nm) silicon films. Both modeling and experimental results show that excellent subthreshold slopes can be obtained (62 mV/ decade) when the silicon film thickness is smaller than the maximum depletion depth in the transistor channel. For comparison, the subthreshold slope of transistors made in thicker films is also reported. 
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