Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

@article{Hong2011SubthresholdDO,
  title={Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge},
  author={By He-Jing Hong and N. Cho and S. J. Lee and Y. S. Yu and Luryi Choi and Y. C. Jung and K. H. Cho and K. H. Yeo and D. Kim and G. Y. Jin and K. S. Oh and Donggun Park and S.-H Song and J. Rieh and S. W. Hwang},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={1179-1181}
}
We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities. 

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