Substitutional mechanism of Ni into the wide-band-gap semiconductor InTaO4 and its implications for water splitting activity in the wolframite structure type.

Abstract

The mechanism of Ni substitution into the oxide semiconductor InTaO(4) has been studied through a combination of structural and spectroscopic techniques, providing insights into its previously reported photoactivity. Magnetic susceptibility and X-ray absorption near-edge spectroscopy (XANES) measurements demonstrate that nickel is divalent within the host… (More)
DOI: 10.1021/ic202715c

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@article{Malingowski2012SubstitutionalMO, title={Substitutional mechanism of Ni into the wide-band-gap semiconductor InTaO4 and its implications for water splitting activity in the wolframite structure type.}, author={Andrew C Malingowski and Peter W. Stephens and Ashfia Huq and Qingzhen Huang and Syed Jahanzaib Khalid and Peter G Khalifah}, journal={Inorganic chemistry}, year={2012}, volume={51 11}, pages={6096-103} }