Substitutional and interstitial oxygen in wurtzite GaN

@inproceedings{Wright2002SubstitutionalAI,
  title={Substitutional and interstitial oxygen in wurtzite GaN},
  author={Alan Francis Wright},
  year={2002}
}
First-principles theoretical results are presented for substitutional and interstitial carbon in wurtzite GaN. Carbon is found to be a shallow acceptor when substituted for nitrogen (CN) and a shallow donor when substituted for gallium (CGa). Interstitial carbon (CI) is found to assume different configurations depending on the Fermi level: A site at the center of the c-axis channel is favored when the Fermi level is below 0.9 eV (relative to the valence band maximum) and a split-interstitial… CONTINUE READING

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AlGaN devices and growth of device structures

  • Journal of Materials Science
  • 2015
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