Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithography

@article{Miyake1987SubhalfmicrometerPM,
  title={Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithography},
  author={M. Miyake and T. Kobayashi and K. Deguchi and M. Kimizuka and S. Horiguchi and K. Kiuchi},
  journal={IEEE Electron Device Letters},
  year={1987},
  volume={8},
  pages={266-268}
}
Subhalf-micrometer p-channel MOSFET's with ultra-thin gate oxide (3.5 nm) have been fabricated using X-ray lithography and electron cyclotron resonance (ECR) plasma etching. The fabricated MOSFET's with 0.2-µm channel lengths show long-channel behavior and extremely high (200 mS/mm) transconductance. 
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