Sub-nanosecond pulse characteristics of InGaP/GaAs HBTs

@article{Jin2010SubnanosecondPC,
  title={Sub-nanosecond pulse characteristics of InGaP/GaAs HBTs},
  author={Renfeng Jin and Cheng Chen and Subrata Halder and Walter R. Curtice and James C. M. Hwang},
  journal={2010 IEEE MTT-S International Microwave Symposium},
  year={2010},
  pages={409-412}
}
Using a novel sub-nanosecond pulse current-voltage measurement technique, InGaP/GaAs heterojunction bipolar transistors were shown to survive strong impact ionization and to have a much larger safe operating area than previously measured or predicted. As the result, an empirical model for impact ionization was constructed and added to a commercially… CONTINUE READING