Sub-micro-gravity capacitive SOI microaccelerometers

  title={Sub-micro-gravity capacitive SOI microaccelerometers},
  author={B. V. Amini and Reza Abdolvand and Farrokh Ayazi},
  journal={The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.},
  pages={515-518 Vol. 1}
The implementation and preliminary characterization of a new in-plane capacitive microaccelerometer with sub-micro-gravity resolution (<200ng//spl radic/Hz) and very high sensitivity (>15pF/g) is presented. The accelerometers are fabricated in thick (>100 /spl mu/m) silicon-on-insulator (SOI) substrates using a 2-mask fully-dry-release process that provides large seismic mass (>10 mg), reduced capacitive gaps, and reduced in-plane stiffness. The fabricated devices were interfaced to a high… CONTINUE READING
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, and F . Ayazi " A high resolution , stictionless , CMOS - compatible SOI accelerometer with a low - noise , low - power , 0 . 25 μ m CMOS interface

  • S. Pourkamali Vakili Amini
  • 2004

, and F . Ayazi , " A 2 . 5 V 14 - bit Sigma - Delta CMOS - SO 1 capacitive accelerometer

  • S. Pourkamali Vakili Amini, M. Zaman, F. Ayazi, Vakili Amini

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