Sub-bandgap polysilicon photodetector in zero-change CMOS process for telecommunication wavelength.

Abstract

We report a defect state based guided-wave photoconductive detector at 1360-1630 nm telecommunication wavelength directly in standard microelectronics CMOS processes, with zero in-foundry process modification. The defect states in the polysilicon used to define a transistor gate assists light absorption. The body crystalline silicon helps form an inverse… (More)
DOI: 10.1364/OE.23.032643

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