Sub-Half Micron Isolation Method with Self-Aligned Channel Stopper

@article{Wakamiya1991SubHalfMI,
  title={Sub-Half Micron Isolation Method with Self-Aligned Channel Stopper},
  author={W. Wakamiya and Yasuo Ohno and Hisamichi Kimura and Shin Satoh},
  journal={ESSDERC '91: 21st European Solid State Device Research Conference},
  year={1991},
  pages={639-642}
}
In this paper, described is a new simple isolation method utilized for realizing sub-half micron devices. Substantially, this isolation method is a dielectric isolation, of which field oxide is the CVD-oxide instead of the thermal oxide with self-aligned chan-stop region.