Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching

@article{deBoor2010Sub100NS,
  title={Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching},
  author={Johannes de Boor and Nadine Geyer and J{\"o}rg V Wittemann and U. G{\"o}sele and Volker Schmidt},
  journal={Nanotechnology},
  year={2010},
  volume={21},
  pages={095302}
}
By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 × 107 mm − 2. The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm2. The applied technique allows for a tailoring of nanowire size and density. Using a controlled and scalable process to fabricate sub-100 nm silicon nanowires is an… 

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