Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching.

Abstract

By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 x 10(7) mm(-2). The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm(2). The applied technique… (More)
DOI: 10.1088/0957-4484/21/9/095302

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