Sub-100 nm nMOSFETs with direct tunneling thermal, nitrous and nitric oxides

  title={Sub-100 nm nMOSFETs with direct tunneling thermal, nitrous and nitric oxides},
  author={Geoffrey Yeap and Qi San Jose Xiang and M. Song and Khaled Z. Ahmed and Dong Soo Bang and Effiong E. Ibok and M.-R. Lin},
  journal={56th Annual Device Research Conference Digest (Cat. No.98TH8373)},
  • G. Yeap, Q. Xiang, +4 authors M. Lin
  • Published 1998
  • Materials Science
  • 56th Annual Device Research Conference Digest (Cat. No.98TH8373)
Performance and reliability of sub-100 nm gate length devices using a dual gate and shallow trench isolated CMOS technology were investigated. Ultra-thin direct tunneling (DT) thermal, nitrous and nitric oxides as thin as 1.3 nm are used. Only N-MOS device results are reported here. The ultra thin LPT gate oxides are produced by a furnace oxidation with a dilute oxygen flow. Nitrous and nitric oxides are formed respectively by N/sub 2/O and NO treatments. The sub-100 nm gate length is realized… Expand

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