Sub-10 nm carbon nanotube transistor

@article{Franklin2011Sub10NC,
  title={Sub-10 nm carbon nanotube transistor},
  author={Aaron D. Franklin and Shu-jen Han and George S. Tulevski and Mathieu Luisier and Chris M. Breslin and L. M. Gignac and Mark S. Lundstrom and Wilfried E. Haensch},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={23.7.1-23.7.3}
}
This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected. Numerical simulations suggest that a possible explanation for the surprisingly good performance is a result of the gate modulating both the charge in the channel and in the contact regions. The unprecedented performance should ignite exciting new research into improving the purity and placement of nanotubes, as well as optimizing CNT transistor… 

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