Sub-10 nm FinFETs and tunnel-FETs: From devices to systems

@article{Sharma2015Sub10NF,
  title={Sub-10 nm FinFETs and tunnel-FETs: From devices to systems},
  author={Ankit Sharma and A. Arun Goud and Kaushik Roy},
  journal={2015 Design, Automation & Test in Europe Conference & Exhibition (DATE)},
  year={2015},
  pages={1443-1448}
}
In this paper, a detailed device/circuit/system level assessment of sub-10nm GaSb-InAs Tunneling Field Effect Transistors (TFET) versus Silicon FinFETs operating at near-threshold voltages is reported. A source underlapped GaSb-InAs TFET is used to achieve lower subthreshold swings than previously reported TFETs and an analytical justification is provided to explain the observed improvement. Through atomistic, 2D ballistic simulations using self-consistently, coupled Non-equilibrium Green's… CONTINUE READING
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