Study to the integrated micro piezoresistive accelerometer for high g application with amplifying circuit

@article{Shi2004StudyTT,
  title={Study to the integrated micro piezoresistive accelerometer for high g application with amplifying circuit},
  author={Jin-jie Shi and Wei Zhang and Yi-long Hao and Zhao-jun Zeng},
  journal={Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.},
  year={2004},
  volume={3},
  pages={1820-1823 vol.3}
}
This paper presents the design, fabrication and test of a MEMS accelerometer for high g applications. We adopt crystal silicon as the base for the sensor, which on the one hand can help us to explore the anti-overload ability and piezoresistive characteristics of the silicon, and on the other hand can also help us to achieve our goal of the pure integrated MEMS sensor with circuit on the same silicon wafer base. We present an alternative way to achieve integrity between the sensor cells and the… CONTINUE READING

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Micro - electromechanical systems and test results of SiC MEMS for highg launch applications ; Sensors , 2002

  • G. L. Katulka
  • Proceedings of IEEE

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