Study on random telegraph noise of gate-ail-around poly-Si junctionless nanowire transistors

Abstract

In this work we study the random telegraph noise (RTN) characteristics of short-channel gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistors. The test devices were fabricated with I-line-based lithography in combination with novel spacer-etching techniques for aggressively shrinking the channel dimension. Based on the tiny nanowire… (More)

5 Figures and Tables

Topics

  • Presentations referencing similar topics