Study on palladium germanide on Ge-on-Si substrate for nanoscale Ge channel Schottky barrier MOSFETs

Abstract

In this article, we investigated the fabrication and characteristics of Pd germanide Schottky contacts on n-type Ge substrate. It is shown that the lowest sheet resistance and uniform Pd germanide can be obtained by a one step RTP at 400 °C for 30 sec. The proposed Pd germanide/nGe contact exhibited electron Schottky barrier height and work function of 0… (More)

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