Study on Hole Effective Mass of Strained Si1-xGex/(101)Si

@article{Song2009StudyOH,
  title={Study on Hole Effective Mass of Strained Si1-xGex/(101)Si},
  author={Jianjun Song and Heming Zhang and Huiyong Hu and Rong Xi Xuan and Xian Ying Dai},
  journal={2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)},
  year={2009},
  pages={362-364}
}
Using K.P method with the help of perturbation theory, the arbitrary k wave vector directional hole effective masses in strained Si<inf>1−x</inf>Ge<inf>x</inf>/(101)Si were obtained. It is found that the more obvious anisotropy of the hole effective mass occurs in strained Si<inf>1−x</inf>Ge<inf>x</inf> on (101) Si substrate and that the [010] directional hole effective mass decreases obviously under strain, compared with the one in relaxed Si. The results above can supply valuable references… CONTINUE READING

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