Study of terahertz radiation from InAs and InSb

  title={Study of terahertz radiation from InAs and InSb},
  author={Ping Gu and M. Tani and Shunsuke Kono and Kiyomi Sakai},
Terahertz radiation from InSb and InAS, which are typical narrow band-gap semiconductors, was investigated using time-resolved THz emission measurements. When we compared between the polarity of the THz waveforms of these narrow band-gap semiconductors with that of InP, which is a wide bandgap semiconductor, we concluded that the ultrafast buildup of the photo-Dember field is the main mechanism for the emission of THz radiation in both InAs and InSb. The emission efficiency of InSb is… CONTINUE READING
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