Study of terahertz radiation from InAs and InSb

@inproceedings{Gu2002StudyOT,
  title={Study of terahertz radiation from InAs and InSb},
  author={Ping Gu and M. Tani and Shunsuke Kono and Kiyomi Sakai},
  year={2002}
}
Terahertz radiation from InSb and InAS, which are typical narrow band-gap semiconductors, was investigated using time-resolved THz emission measurements. When we compared between the polarity of the THz waveforms of these narrow band-gap semiconductors with that of InP, which is a wide bandgap semiconductor, we concluded that the ultrafast buildup of the photo-Dember field is the main mechanism for the emission of THz radiation in both InAs and InSb. The emission efficiency of InSb is… CONTINUE READING
Highly Cited
This paper has 71 citations. REVIEW CITATIONS
39 Citations
0 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 39 extracted citations

72 Citations

051015'07'10'13'16
Citations per Year
Semantic Scholar estimates that this publication has 72 citations based on the available data.

See our FAQ for additional information.

Similar Papers

Loading similar papers…