Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation

@article{Haugan2008StudyOR,
  title={Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation},
  author={H. J. Haugan and Said Elhamri and F. Szmulowicz and B. Manfred Ullrich and Gail J. Brown and William C. Mitchel},
  journal={Applied Physics Letters},
  year={2008},
  volume={92},
  pages={071102}
}
The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430°C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 1011cm−2, and a minimum density of 1.8×1011cm−2 was obtained from the SL grown at 400°C. With increasing growth temperature, the in-plane carrier mobility decreased from 8740to1400cm2∕Vs due to increased interfacial… 

Figures from this paper

Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors
The mid-infrared 21 A InAs/24 A GaSb superlattices (SLs) designed for the 4 μm cutoff wavelength were grown by molecular beam epitaxy at growth temperatures between 370 and 430 °C in order to reduce
Growth optimization for low residual carriers in undoped midinfrared InAs/GaSb superlattices
Reducing residual background carriers in InAs/GaSb superlattices (SLs) is an essential task to increase the operating temperature of photoconductive devices. This paper discusses how low-temperature
Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection
We explore the optimum growth space for a 47.0 A InAs/21.5 A Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process
Characterization of midwave infrared InAs/GaSb superlattice photodiode
We report on structural, electrical, and optical characterizations of midwave infrared InAs/GaSb superlattice (SL) p-i-n photodiodes. High-quality SL samples, with 1 μm thick active region (220 SL
Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization
In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process
Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction
Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p–n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between
Optical and electrical quality improvements of undoped InAs∕GaSb superlattices
The performance and operating temperature of infrared (IR) detectors are largely limited by thermal generation and noise processes in the active region of the device. Particularly, excess background
Carrier mobility as a function of carrier density in type-II InAs/GaSb superlattices
We report on a study of the in-plane carrier mobility in InAs/GaSb superlattices as a function of carrier density. Instead of using a number of differently doped samples, we use the
InAs/GaSb Type-II Superlattice Detectors
InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices
The impact of post growth annealing on the electrical properties of a long wavelength infrared type-II superlattice (SL) was explored. Quarters of a single SL wafer were annealed at 440 °C, 480 °C,
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 19 REFERENCES
Control of the residual doping of InAs/(GaIn)Sb infrared superlattices
Magnetotransport and photoluminescence (PL) measurements on InAs/(GaIn)Sb superlattices (SLs) grown by molecular-beam epitaxy on GaSb substrates at different substrate temperatures are reported. With
AUGER LIFETIME ENHANCEMENT IN INAS-GA1-XINXSB SUPERLATTICES
We have experimentally and theoretically investigated the Auger recombination lifetime in InAs–Ga1−xInxSb superlattices. Data were obtained by analyzing the steady‐state photoconductive response to
Growth of short-period InAs∕GaSb superlattices
The purpose of this work is to explore materials for midinfrared detectors that can operate at room temperature. Shorter-period InAs∕GaSb superlattices (SLs) have larger intervalance band
Influence of residual impurity background on the nonradiative recombination processes in high purity InAs∕GaSb superlattice photodiodes
The influence of the impurity background on the recombination processes in type-II InAs∕GaSb superlattice photodiodes with a cutoff wavelength of approximately 4.8μm was investigated by
Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes
The residual carrier backgrounds of binary type-II InAs∕GaSb superlattice photodiodes with cutoff wavelengths around 5μm have been studied in the temperature range between 20 and 200K. By applying a
Minority carrier diffusion length and lifetime for electrons in a type-II InAs /GaSb superlattice photodiode
We use the electron-beam-induced current (EBIC) technique to investigate carrier transport characteristics in a type-II InAs∕GaSb superlattice photodiode with cutoff wavelength at 7.7μm. We use a
Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
InAs/GaSb short-period superlattices (SLs) with a broken gap type-II band alignment are investigated for the fabrication of photovoltaic pin-photodetectors on GaSb substrates. The structures were
Infrared imaging with InAs/GaSb type-II superlattices
InAs/GaSb short period superlattices (SLs) with broken gap typ-II band alignment are very well suited for the fabrication of high performance infrared camera systems for the second atmospheric window
Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices
The in-plane transport in InAs∕GaSb type-II superlattices (SLs) is a sensitive indicator of SL growth quality and of the eventual performance of devices made from these materials. The in-plane
Exploring optimum growth for high quality InAs/GaSb type-II superlattices
Abstract Fundamental material issues in the growth of InAs/GaSb type-II superlattice (SL) structures using molecular beam epitaxy (MBE) have been addressed. The effect of starting substrate surface
...
1
2
...