• DOI:10.1063/1.2884264
• Corpus ID: 39187771

Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation

@article{Haugan2008StudyOR,
  title={Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation},
  author={H. J. Haugan and Said Elhamri and F. Szmulowicz and Bruno Ullrich and Gail J. Brown and William C. Mitchel},
  journal={Applied Physics Letters},
  year={2008},
  volume={92},
  pages={071102}
}

• H. Haugan, S. Elhamri, +3 authors W. Mitchel
• Published 19 February 2008
• Materials Science
• Applied Physics Letters

The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430°C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 1011cm−2, and a minimum density of 1.8×1011cm−2 was obtained from the SL grown at 400°C. With increasing growth temperature, the in-plane carrier mobility decreased from 8740to1400cm2∕Vs due to increased interfacial roughness, while the photoluminescence intensity increased sixfold due to a decrease in the nonradiative defect densities.