Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation

@article{Haugan2008StudyOR,
  title={Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation},
  author={H. Haugan and S. Elhamri and F. Szmulowicz and B. Ullrich and G. Brown and W. Mitchel},
  journal={Applied Physics Letters},
  year={2008},
  volume={92},
  pages={071102}
}
The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430°C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 1011cm−2, and a minimum density of 1.8×1011cm−2 was obtained from the SL grown at 400°C. With increasing growth temperature, the in-plane carrier mobility decreased from 8740to1400cm2∕Vs due to increased interfacial… Expand

Figures from this paper

Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction
InAs/GaSb Type-II Superlattice Detectors
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