Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation

  title={Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation},
  author={H. J. Haugan and Said Elhamri and F. Szmulowicz and Bruno Ullrich and Gail J. Brown and William C. Mitchel},
  journal={Applied Physics Letters},
The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430°C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 1011cm−2, and a minimum density of 1.8×1011cm−2 was obtained from the SL grown at 400°C. With increasing growth temperature, the in-plane carrier mobility decreased from 8740to1400cm2∕Vs due to increased interfacial… 

Figures from this paper

Growth optimization for low residual carriers in undoped midinfrared InAs/GaSb superlattices

Reducing residual background carriers in InAs/GaSb superlattices (SLs) is an essential task to increase the operating temperature of photoconductive devices. This paper discusses how low-temperature

Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

We explore the optimum growth space for a 47.0 A InAs/21.5 A Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process

Characterization of midwave infrared InAs/GaSb superlattice photodiode

We report on structural, electrical, and optical characterizations of midwave infrared InAs/GaSb superlattice (SL) p-i-n photodiodes. High-quality SL samples, with 1 μm thick active region (220 SL

Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process

Optical and electrical quality improvements of undoped InAs∕GaSb superlattices

The performance and operating temperature of infrared (IR) detectors are largely limited by thermal generation and noise processes in the active region of the device. Particularly, excess background

Carrier mobility as a function of carrier density in type-II InAs/GaSb superlattices

We report on a study of the in-plane carrier mobility in InAs/GaSb superlattices as a function of carrier density. Instead of using a number of differently doped samples, we use the

InAs/GaSb Type-II Superlattice Detectors

InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

The impact of post growth annealing on the electrical properties of a long wavelength infrared type-II superlattice (SL) was explored. Quarters of a single SL wafer were annealed at 440 °C, 480 °C,



Control of the residual doping of InAs/(GaIn)Sb infrared superlattices

Magnetotransport and photoluminescence (PL) measurements on InAs/(GaIn)Sb superlattices (SLs) grown by molecular-beam epitaxy on GaSb substrates at different substrate temperatures are reported. With


We have experimentally and theoretically investigated the Auger recombination lifetime in InAs–Ga1−xInxSb superlattices. Data were obtained by analyzing the steady‐state photoconductive response to

Growth of short-period InAs∕GaSb superlattices

The purpose of this work is to explore materials for midinfrared detectors that can operate at room temperature. Shorter-period InAs∕GaSb superlattices (SLs) have larger intervalance band

Influence of residual impurity background on the nonradiative recombination processes in high purity InAs∕GaSb superlattice photodiodes

The influence of the impurity background on the recombination processes in type-II InAs∕GaSb superlattice photodiodes with a cutoff wavelength of approximately 4.8μm was investigated by

Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes

The residual carrier backgrounds of binary type-II InAs∕GaSb superlattice photodiodes with cutoff wavelengths around 5μm have been studied in the temperature range between 20 and 200K. By applying a

Minority carrier diffusion length and lifetime for electrons in a type-II InAs /GaSb superlattice photodiode

We use the electron-beam-induced current (EBIC) technique to investigate carrier transport characteristics in a type-II InAs∕GaSb superlattice photodiode with cutoff wavelength at 7.7μm. We use a

Infrared imaging with InAs/GaSb type‐II superlattices

InAs/GaSb short period superlattices (SLs) with broken gap typ‐II band alignment are very well suited for the fabrication of high performance infrared camera systems for the second atmospheric window

Type II superlattice photodetectors for MWIR to VLWIR focal plane arrays

Infrared sensors utilizing Type II superlattice structures have gained increased attention in the past few years. With the stronger covalent bonds of the III-V materials, greater material uniformity