Study of repetitive avalanche stress invoked degradation of electrical properties of DMOS and TrenchMOS transistors


An electrical ageing of three power MOS transistor types has been performed in order to investigate the gradual degradation in time (number of stress pulses) of the static electrical parameters. It is attributed to hot carrier injection in the space charge region of drain - P well blocking PN junction and involves different complex mechanisms mainly defects… (More)