Study of radiation induced deep-level defects and annealing effects in the proton irradiated AlGaAs-GaAs solar cells

@inproceedings{Li1981StudyOR,
  title={Study of radiation induced deep-level defects and annealing effects in the proton irradiated AlGaAs-GaAs solar cells},
  author={Sheng San Li},
  year={1981}
}
The radiation induced deep-level defects and the recombination parameters in the proton irradiated AlGaAs-GaAs p-n junction solar cells were investigated over a wide range of proton energies (from 50 KeV to 10 MeV) and proton fluences (from 10 to the 10th to 10 to the 13th P/sq cm), using DLTS, I-V, C-V, and SEM-EMIC measurement techniques. The measurements were used to determine the defect and recombination parameters such as defect density and energy level, carrier lifetimes, and the hole… CONTINUE READING

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